Effects of Al component content on optoelectronic properties of AlxGa1−xN

Effects of Al component content on optoelectronic properties of Al_xGa_1−xN

Ji Yan-Jun^{1, 2, †}, Wang Jun-Ping^{1, 2}, Liu You-Wen^{1, ‡}

(a) The total density of states of GaN, (b) partial density of states of N atoms, and (c) partial density of states of Ga atoms.