Dependence of switching process on the perpendicular magnetic anisotropy constant in P-MTJ<xref rid="cpb_27_9_098504_fn1" ref-type="fn">*</xref><fn id="cpb_27_9_098504_fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 61332003) and the Natural Science Foundation of Hunan Province, China (Grant No. 2015JJ3024).</p></fn>

Dependence of switching process on the perpendicular magnetic anisotropy constant in P-MTJ**

Project supported by the National Natural Science Foundation of China (Grant No. 61332003) and the Natural Science Foundation of Hunan Province, China (Grant No. 2015JJ3024).

Yang Mao-Sen¹, Fang Liang^{1, †}, Chi Ya-Qing²

(color online) Typical perpendicular magnetic tunnel junction (P-MTJ) structure of (a) anti-parallel state of MTJ, and (b) parallel state of MTJ. F_Free and F_Polarizer are the ferromagnetic free layer and fixed layer; the insulator layer is sandwiched between F_Free and F_Polarizer. The current direction and coordinate system are as shown.