Efficiency-enhanced AlGaInP light-emitting diodes using transparent plasmonic silver nanowires<xref rid="cpb_27_9_098502fn1" ref-type="fn">*</xref><fn id="cpb_27_9_098502fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400603) and the National Natural Science Foundation of China (Grant No. 61335004).</p></fn>

Efficiency-enhanced AlGaInP light-emitting diodes using transparent plasmonic silver nanowires**

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400603) and the National Natural Science Foundation of China (Grant No. 61335004).

Guo Xia^{1, †}, Liu Qiao-Li², Tian Hui-Jun², Guo Chun-Wei², Li Chong², Hu An-Qi¹, He Xiao-Ying¹, Wu Hua^{3, ‡}

(color online) Electrical and optical characteristics of AlGaInP LEDs with AgNW networks fabricated using a solution concentration of 0.5 mg/mL. The top GaP window layer thickness was 0.5 μm, 1 μm, or 8 μm. (a) Current–voltage measurements for AlGaInP LEDs with and without AgNW networks. (b) Comparison of the light output powers of AlGaInP LEDs with and without an AgNW network versus dc injection at room temperature. Current injection modes of the AlGaInP LEDs (c) with and (d) without AgNW networks. (e) Calculated normalized current density distribution inside the GaP window layer for square AlGaInP LED chips with and without an AgNW network on the surface of GaP.