Efficiency-enhanced AlGaInP light-emitting diodes using transparent plasmonic silver nanowires<xref rid="cpb_27_9_098502fn1" ref-type="fn">*</xref><fn id="cpb_27_9_098502fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400603) and the National Natural Science Foundation of China (Grant No. 61335004).</p></fn>

Efficiency-enhanced AlGaInP light-emitting diodes using transparent plasmonic silver nanowires**

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400603) and the National Natural Science Foundation of China (Grant No. 61335004).

Guo Xia^{1, †}, Liu Qiao-Li², Tian Hui-Jun², Guo Chun-Wei², Li Chong², Hu An-Qi¹, He Xiao-Ying¹, Wu Hua^{3, ‡}

(color online) FDTD simulation results of enhanced transmission through periodic AgNW openings. (a) Conceptual drawing of the extra light transmission through a subwavelength opening. (b) and (c) FDTD simulation results of electric and magnetic field distribution of a one-period structure by a normal incident TM polarized plane wave at 550 nm. The AgNW filling factor is 50% on a glass substrate with a period of 100 nm. (d) Calculated transmittance from 300 nm to 800 nm with AgNW filling factors of 33.33% and 50% on glass substrates with normal-incidence TM polarized plane waves. (e) The dependence of transmittance at 550 nm on the AgNW filling factor for TE and TM polarized plane waves. (f) Cathodoluminescence measurement results for AlGaInP LEDs with and without an AgNW network fabricated using a solution concentration of 0.5 mg/mL.