Efficiency-enhanced AlGaInP light-emitting diodes using transparent plasmonic silver nanowires<xref rid="cpb_27_9_098502fn1" ref-type="fn">*</xref><fn id="cpb_27_9_098502fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400603) and the National Natural Science Foundation of China (Grant No. 61335004).</p></fn>

Efficiency-enhanced AlGaInP light-emitting diodes using transparent plasmonic silver nanowires**

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400603) and the National Natural Science Foundation of China (Grant No. 61335004).

Guo Xia^{1, †}, Liu Qiao-Li², Tian Hui-Jun², Guo Chun-Wei², Li Chong², Hu An-Qi¹, He Xiao-Ying¹, Wu Hua^{3, ‡}

(color online) SEM images of AgNW networks formed on Si substrates by spin coating with AgNW solution concentrations of (a) 0.5 mg/mL and (b) 1.5 mg/mL. The insets are the corresponding magnified images at a magnification of 5 × 10⁴. (c) Spectral transmittance of AgNW networks on glass substrates prepared by spin coating at 270 rpm using AgNW concentrations of 0.5 mg/mL and 1.5 mg/mL.