Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory<xref rid="cpb_27_9_098501fn1" ref-type="fn">*</xref><fn id="cpb_27_9_098501fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 616340084), the Youth Innovation Promotion Association of CAS (Grant No. 2014101), the International Cooperation Project of CAS, and the Austrian-Chinese Cooperative R&D Projects (Grant No. 172511KYSB20150006).</p></fn>

Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory**

Project supported by the National Natural Science Foundation of China (Grant No. 616340084), the Youth Innovation Promotion Association of CAS (Grant No. 2014101), the International Cooperation Project of CAS, and the Austrian-Chinese Cooperative R&D Projects (Grant No. 172511KYSB20150006).

Bi Jin-Shun^{1, 2, †}, Xi Kai¹, Li Bo¹, Wang Hai-Bin³, Ji Lan-Long¹, Li Jin¹, Liu Ming¹

(color online) Error bits with respect to LETs and annealing conditions. (a) LET = 99.8 MeV/(mg/cm²), (b) LET = 67.1 MeV/(mg/cm²), and (c) LET = 57.5 MeV/(mg/cm²).