Magnetism manipulation in ferromagnetic/ferroelectric heterostructures by electric field induced strain
Project supported by the National Natural Science Foundation of China (Grant No. 51671098) and the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT16R35).
(color online) (a) Schematic diagram of the measurement set-up. The voltage is applied to the PMN-PT substrates along the x-direction with a distance of 1 mm between the two electrodes. The applied voltage of VPMN-PT was removed during the current switching measurements. (b), (c) The current-induced magnetization switching after the polarization with the voltages of +500 V and −500 V on the PMN-PT substrate. (d) The deterministic magnetization switching by a series of current pulses applied to the device with 3-nm-thick bottom Pt layer. A small current IM (∼ 0.1 mA) was applied to measure the Hall resistance to distinguish the magnetization state (from Fig.
