Magnetism manipulation in ferromagnetic/ferroelectric heterostructures by electric field induced strain<xref rid="cpb_27_9_097506fn1" ref-type="fn">*</xref><fn id="cpb_27_9_097506fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 51671098) and the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT16R35).</p></fn>

Magnetism manipulation in ferromagnetic/ferroelectric heterostructures by electric field induced strain**

Project supported by the National Natural Science Foundation of China (Grant No. 51671098) and the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT16R35).

Guo Xiaobin, Li Dong, Xi Li^†

(color online) (a) In-plane ΔM/M(0)–E loop, the magnetic field is 0.05 T. (b) Out-of-plane. ΔM/M(0)–E loop, the magnetic field is 0.2 T (from Fig. 4 in Ref. [42]).