Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors

Zhao Xiao-Song^{1, 2}, Han Wei-Hua^{1, 2, †}, Guo Yang-Yan^{1, 2}, Dou Ya-Mei^{1, 2}, Yang Fu-Hua^{1, 2, 3, ‡}

(color online) (a) Arrhenius plots of conductance at various gate voltages, which correspond to maximum peaks at V_gm and three valleys V_g1, V_g2, V_g3 in the transconductance curves of Fig. 2(b). (b) Activation energies versus the gate voltage in different temperature regions.