Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors

Zhao Xiao-Song^{1, 2}, Han Wei-Hua^{1, 2, †}, Guo Yang-Yan^{1, 2}, Dou Ya-Mei^{1, 2}, Yang Fu-Hua^{1, 2, 3, ‡}

(color online) (a) Conductance curves G–V_g (a) and (b) transconductance curves g_m–V_g at V_ds = 10 mV for different temperatures. The curves at each temperature are systematically shifted for the clarity of the fine current steps. The values of gate voltage spacing of two transconductance peaks are 0.464 V at 10 K, 15 K, 30 K and 0.4 V at 20 K, respectively.