Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors

Zhao Xiao-Song^{1, 2}, Han Wei-Hua^{1, 2, †}, Guo Yang-Yan^{1, 2}, Dou Ya-Mei^{1, 2}, Yang Fu-Hua^{1, 2, 3, ‡}

(color online) (a) The current-off voltage V_gp and the gate voltage V_gm at the maximum g_m peak versus temperature. The V_gp and V_gm are marked by dots and asterisks in Fig. 2(b). The current-off voltages are set to be the gate voltage at which the current is 10⁻¹² A. (b) Effective mobility dependence on temperature. (c) Electron concentration dependence on temperature.