Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors

Zhao Xiao-Song^{1, 2}, Han Wei-Hua^{1, 2, †}, Guo Yang-Yan^{1, 2}, Dou Ya-Mei^{1, 2}, Yang Fu-Hua^{1, 2, 3, ‡}

(color online) (a) Drain current I_ds and (b) transconductance g_m (g_m = ∂I_ds/∂V_gs) versus gate voltage V_g of a single channel JNT at V_ds = 10 mV at different temperatures. The curves in panel (b) are shifted for clarity.