Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors

Zhao Xiao-Song^{1, 2}, Han Wei-Hua^{1, 2, †}, Guo Yang-Yan^{1, 2}, Dou Ya-Mei^{1, 2}, Yang Fu-Hua^{1, 2, 3, ‡}

(color online) (a) Top view SEM image of our device after gate formation. The cross section of channel is 18 nm × 30 nm and the gate length is 280 nm. (b) Three-dimensional schematic of JNT after Al pad formation.