Effect of SiN:H<sub><i>x</i></sub> passivation layer on the reverse gate leakage current in GaN HEMTs

Effect of SiN:H_x passivation layer on the reverse gate leakage current in GaN HEMTs

Zhang Sheng^{1, 2}, Wei Ke^{2, †}, Xiao Yang¹, Ma Xiao-Hua¹, Zhang Yi-Chuan², Liu Guo-Guo², Lei Tian-Min¹, Zheng Ying-Kui², Huang Sen², Wang Ning², Asif Muhammad², Liu Xin-Yu²

(color online) FTIR absorption spectra of the SiN films on GaN HEMTs.