Effect of SiN:Hx passivation layer on the reverse gate leakage current in GaN HEMTs
Zhang Sheng1, 2, Wei Ke2, †, Xiao Yang1, Ma Xiao-Hua1, Zhang Yi-Chuan2, Liu Guo-Guo2, Lei Tian-Min1, Zheng Ying-Kui2, Huang Sen2, Wang Ning2, Asif Muhammad2, Liu Xin-Yu2
       

(color online) (a) RMS roughness and the maximum undulation of SiN thin films for three HEMTs. The AFM morphology of samples (b) 1, (c) 2, and (d) 3.