Characteristics and threshold voltage model of GaN-based FinFET with recessed gate<xref rid="cpb_27_9_097308fn1" ref-type="fn">*</xref><fn id="cpb_27_9_097308fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400 300) and the National Natural Science Foundation of China (Grant Nos. 61574110, 61574112, and 61474091).</p></fn>

Characteristics and threshold voltage model of GaN-based FinFET with recessed gate**

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400 300) and the National Natural Science Foundation of China (Grant Nos. 61574110, 61574112, and 61474091).

Wang Chong^{1, †}, Wang Xin¹, Zheng Xue-Feng¹, Wang Yun², He Yun-Long¹, Tian Ye¹, He Qing¹, Wu Ji¹, Mao Wei¹, Ma Xiao-Hua¹, Zhang Jin-Cheng¹, Hao Yue¹

(color online) Relation between the threshold voltage and the AlGaN layer thickness of C-HEMT and FinFETs (W_fin = 100 nm and 160 nm).