Characteristics and threshold voltage model of GaN-based FinFET with recessed gate*

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400 300) and the National Natural Science Foundation of China (Grant Nos. 61574110, 61574112, and 61474091).

Wang Chong1, †, Wang Xin1, Zheng Xue-Feng1, Wang Yun2, He Yun-Long1, Tian Ye1, He Qing1, Wu Ji1, Mao Wei1, Ma Xiao-Hua1, Zhang Jin-Cheng1, Hao Yue1
       

(color online) (a) Transfer and (b) transconductance characteristics of C-HEMT and FinFETs at VDS = 10 V (Wfin = 100, 120, 140, and 160 nm).