Electrical spin polarization through spin–momentum locking in topological-insulator nanostructures<xref rid="cpb_27_9_097307fn1" ref-type="fn">*</xref><fn id="cpb_27_9_097307fn1"><label>*</label><p>Project supported by the National Key Basic Research Program of China (Grant Nos. 2014CB921103 and 2017YFA0206304), the National Natural Science Foundation of China (Grant Nos. 61822403, 11874203, U1732159, and U1732273), Fundamental Research Funds for the Central Universities, China (Grant No. 021014380080), and Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, China.</p></fn>

Electrical spin polarization through spin–momentum locking in topological-insulator nanostructures**

Project supported by the National Key Basic Research Program of China (Grant Nos. 2014CB921103 and 2017YFA0206304), the National Natural Science Foundation of China (Grant Nos. 61822403, 11874203, U1732159, and U1732273), Fundamental Research Funds for the Central Universities, China (Grant No. 021014380080), and Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, China.

Zhang Minhao¹, Wang Xuefeng^{1, 3, †}, Song Fengqi^{2, 3}, Zhang Rong^{1, 3, ‡}

(color online) (a) MR of the lateral heterojunction device. The left inset shows a TEM image of the lateral heterojunction. The right inset shows the results with the WAL phenomenon and its fitting. (b) Mobility and dephasing length of the lateral heterojunction device. This figure is reproduced from Ref. [36].