Electrical spin polarization through spin–momentum locking in topological-insulator nanostructures<xref rid="cpb_27_9_097307fn1" ref-type="fn">*</xref><fn id="cpb_27_9_097307fn1"><label>*</label><p>Project supported by the National Key Basic Research Program of China (Grant Nos. 2014CB921103 and 2017YFA0206304), the National Natural Science Foundation of China (Grant Nos. 61822403, 11874203, U1732159, and U1732273), Fundamental Research Funds for the Central Universities, China (Grant No. 021014380080), and Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, China.</p></fn>

Electrical spin polarization through spin–momentum locking in topological-insulator nanostructures**

Project supported by the National Key Basic Research Program of China (Grant Nos. 2014CB921103 and 2017YFA0206304), the National Natural Science Foundation of China (Grant Nos. 61822403, 11874203, U1732159, and U1732273), Fundamental Research Funds for the Central Universities, China (Grant No. 021014380080), and Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, China.

Zhang Minhao¹, Wang Xuefeng^{1, 3, †}, Song Fengqi^{2, 3}, Zhang Rong^{1, 3, ‡}

(color online) (a) Complex band structure of Bi_0.9Sb_0.1 along the – direction.^[9] (b) Single Dirac cone of Bi₂Se₃ along the – and – directions.^[11] (c) Crystal structure of Bi₂Se₃. A QL is outlined by the red square.^[10] This figure is reproduced from Refs. [9]–[11].