Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures<xref rid="cpb_27_9_097305fn1" ref-type="fn">*</xref><fn id="cpb_27_9_097305fn1"><label>*</label><p>Project supported by the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences and the National Key Research and Development Program of China (Grant No. 2016YFB0100601).</p></fn>

Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures**

Project supported by the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences and the National Key Research and Development Program of China (Grant No. 2016YFB0100601).

Dong Sheng-Xu^{1, 2}, Bai Yun^{1, †}, Tang Yi-Dan^{1, 2}, Chen Hong^{1, 2}, Tian Xiao-Li¹, Yang Cheng-Yue¹, Liu Xin-Yu¹

(color online) X-ray diffraction spectra of W/4H-SiC Schottky contacts surface upon different annealing temperatures. The unlabeled peaks at the diffraction angle about 35° are considered to be SiC.