Electric field manipulation of multiple nonequivalent Dirac cones in the electronic structures of hexagonal CrB<sub>4</sub> sheet<xref rid="cpb_27_9_097304fn1" ref-type="fn">*</xref><fn id="cpb_27_9_097304fn1"><label>*</label><p>Project supported by the National Natural Sciences Foundation of China (Grant Nos. 11704294 and 11504281), the Natural Science Foundation of Hubei Province, China (Grant No. 2016CFB586), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 2017IVA078, 2018IVB017, 2017IB013, 2018IB009, and 2018IB011).</p></fn>

Electric field manipulation of multiple nonequivalent Dirac cones in the electronic structures of hexagonal CrB₄ sheet**

Project supported by the National Natural Sciences Foundation of China (Grant Nos. 11704294 and 11504281), the Natural Science Foundation of Hubei Province, China (Grant No. 2016CFB586), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 2017IVA078, 2018IVB017, 2017IB013, 2018IB009, and 2018IB011).

Wang Jinkun¹, Ke Yajiao^{1, †}, Xie Qingxing¹, Li Yanli¹, Wang Jiafu^{1, 2, ‡}

(color online) The offset degree δ and energy gap under the in-plane electric field. (a) The offset degree δ with its definition shown in the inset, and the energy gap between Γ and J as a function of the electric field. (b) The band structure of CrB₄ crystal under 0.24 V/Å electric field in the direction of B–B bonds.