<i>Ab initio</i> study of H/O trapping and clustering on U/Al interface<xref rid="cpb_27_9_097303fn1" ref-type="fn">*</xref><fn id="cpb_27_9_097303fn1"><label>*</label><p>Project supported by Science Challenge Project of China (Grant No. TZ2016002) and the National Key R&D Program of China (Grant No. 2017YFB0702201).</p></fn>

Ab initio study of H/O trapping and clustering on U/Al interface**

Project supported by Science Challenge Project of China (Grant No. TZ2016002) and the National Key R&D Program of China (Grant No. 2017YFB0702201).

Ouyang Wenhong, Lai Wensheng^†, Zhang Zhengjun

(color online) Different views for the positions of interstitial impurities near the U/Al interface. Interstitial sites are indicated by integers from −2 to 0 at Al layers and from 1 to 3 at U layers.