<i>Ab initio</i> study of H/O trapping and clustering on U/Al interface<xref rid="cpb_27_9_097303fn1" ref-type="fn">*</xref><fn id="cpb_27_9_097303fn1"><label>*</label><p>Project supported by Science Challenge Project of China (Grant No. TZ2016002) and the National Key R&D Program of China (Grant No. 2017YFB0702201).</p></fn>

Ab initio study of H/O trapping and clustering on U/Al interface**

Project supported by Science Challenge Project of China (Grant No. TZ2016002) and the National Key R&D Program of China (Grant No. 2017YFB0702201).

Ouyang Wenhong, Lai Wensheng^†, Zhang Zhengjun

(color online) Three U vacancy sites at the first, the second, and the third layers away from the U/Al interface are marked as a, b, and c, respectively.