Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode<xref rid="cpb_27_9_097203fn1" ref-type="fn">*</xref><fn id="cpb_27_9_097203fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 61774108) and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China.</p></fn>

Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode**

Project supported by the National Natural Science Foundation of China (Grant No. 61774108) and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China.

Wang Yi-Dong, Chen Jun^†

(color online) (a) Structure of TiW/p-InP SBD, and (b) energy band diagram of the TiW/p-InP structure.