Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors*

Project supported by the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advanced Research Project of China (Grant No. 315xxxxx301), and the National Defense Innovation Program of China (Grant No. 48xx4).

Zhang Jing1, 2, Lv Hongliang1, †, Ni Haiqiao2, Niu Zhichuan2, Zhang Yuming1
       

(color online) Id (Vd) with Vg ranging from −1 V to 0 V in steps of 0.1 V at 300 K (solid lines) and 90 K (dot lines).