Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors Project supported by the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advanced Research Project of China (Grant No. 315xxxxx301), and the National Defense Innovation Program of China (Grant No. 48xx4). |
(color online) Id (Vd) with Vg ranging from −1 V to 0 V in steps of 0.1 V at 300 K (solid lines) and 90 K (dot lines). |