Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors<xref rid="cpb_27_9_097201fn1" ref-type="fn">*</xref><fn id="cpb_27_9_097201fn1"><label>*</label><p>Project supported by the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advanced Research Project of China (Grant No. 315xxxxx301), and the National Defense Innovation Program of China (Grant No. 48xx4).</p></fn>

Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors**

Project supported by the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advanced Research Project of China (Grant No. 315xxxxx301), and the National Defense Innovation Program of China (Grant No. 48xx4).

Zhang Jing^{1, 2}, Lv Hongliang^{1, †}, Ni Haiqiao², Niu Zhichuan², Zhang Yuming¹

(color online) I_g (V_g) with V_d ranging from 0.1 V to 0.5 V in steps of 0.1 V at 300 K (solid lines) and 90 K (dot lines).