Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors Project supported by the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advanced Research Project of China (Grant No. 315xxxxx301), and the National Defense Innovation Program of China (Grant No. 48xx4). |
(color online) (a) Schematic InAs/AlSb HEMT and (b) the energy band diagram. |