Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p–n junction<xref rid="cpb_27_9_097104_fn1" ref-type="fn">*</xref><fn id="cpb_27_9_097104_fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400302 and 2016YFB0400603), the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340), and the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).</p></fn>

Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p–n junction**

Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400302 and 2016YFB0400603), the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340), and the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).

Li Yangfeng^{1, 2}, Jiang Yang^{1, 2}, Die Junhui^{1, 2}, Wang Caiwei^{1, 2}, Yan Shen^{1, 2}, Wu Haiyan^{1, 2}, Ma Ziguang^{1, 2}, Wang Lu^{1, 2}, Jia Haiqiang^{1, 2}, Wang Wenxin^{1, 2}, Chen Hong^{1, 2, ‡}

(color online) Schematic of energy band in the quantum wells considering an expansion caused by localized states. The carriers exhibit different behaviors under (a) open and (b) shortcircuit conditions at non-resonant absorption regime. (c) At resonant absorption edge, the carriers will no longer escape out of the well at either open or short conditions.