Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p–n junction<xref rid="cpb_27_9_097104_fn1" ref-type="fn">*</xref><fn id="cpb_27_9_097104_fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400302 and 2016YFB0400603), the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340), and the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).</p></fn>

Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p–n junction**

Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400302 and 2016YFB0400603), the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340), and the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).

Li Yangfeng^{1, 2}, Jiang Yang^{1, 2}, Die Junhui^{1, 2}, Wang Caiwei^{1, 2}, Yan Shen^{1, 2}, Wu Haiyan^{1, 2}, Ma Ziguang^{1, 2}, Wang Lu^{1, 2}, Jia Haiqiang^{1, 2}, Wang Wenxin^{1, 2}, Chen Hong^{1, 2, ‡}

(color online) (color line) Photo-generated current vs. excitation photon energy. The obvious turning points locate at 2.95 eV and 2.75 eV, representing the uppermost and lowermost bandgaps in the quantum well, respectively. The dashed lines are the guide lines denoting the two decreasing ranges. From 2.95 eV to 2.75 eV, the relatively gently decreasing region is due to the sub-band expansion caused by localized states. While the sheer decreasing after 2.75 eV indicates the cut-off of the absorption regime.