Pressure effect in the Kondo semimetal CeRu4Sn6 with nontrivial topology<xref rid="cpb_27_9_097103_fn1" ref-type="fn">*</xref><fn id="cpb_27_9_097103_fn1"><label>*</label>Project supported by the Ministry of Science and Technology of China (Grant Nos. 2015CB921303 and 2017YFA0303103), the National Natural Science Foundation of China (Grant Nos. 11474332 and 11774404), and the Chinese Academy of Sciences through the Strategic Priority Research Program (Grant No. XDB07020200).</fn>

Pressure effect in the Kondo semimetal CeRu₄Sn₆ with nontrivial topology**

Project supported by the Ministry of Science and Technology of China (Grant Nos. 2015CB921303 and 2017YFA0303103), the National Natural Science Foundation of China (Grant Nos. 11474332 and 11774404), and the Chinese Academy of Sciences through the Strategic Priority Research Program (Grant No. XDB07020200).

Zhang Jiahao^{1, 2}, Zhang Shuai¹, Chen Ziheng², Lv Meng^{1, 2}, Zhao Hengcan^{1, 2}, Yang Yi-feng¹, Chen Genfu¹, Sun Peijie^{1, †}

(color online) (a) Isothermal transverse magnetoresistance, MR = (ρ_B − ρ_0T)/ρ_0T, measured as a function of field at T = 0.08 K, at three selected pressures. Panels (b) and (c) display the low-temperature ρ(T) measured in different fields at ambient pressure and at P = 22.9 kbar, respectively. Note that the low-temperature flat resistivity is robust against both pressure and field.