Electronic properties of defects inWeyl semimetal tantalum arsenide

Fu Yan-Long^{1, 2}, Li Chang-Kai^{1, 2}, Zhang Zhao-Jun^{1, 2}, Sang Hai-Bo^{1, 2}, Cheng Wei^{1, 2, 4, †}, Zhang Feng-Shou^{1, 2, 3, ‡}

(color online) Dispersion curves of (a) Ta₃₂As₃₂ and (b) HTa₃₂As₃₂. The Fermi level in panel (b) is almost 0.1 eV above that in panel (a). The square frames indicate the Weyl points.