Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films<xref rid="cpb_27_9_096104_fn1" ref-type="fn">*</xref><fn id="cpb_27_9_096104_fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 50972129 and 50602039), the International Science Technology Cooperation Program of China (Grant No. 2014DFR51160), the National Key Research and Development Program of China (Grant No. 2016YFE0133200), European Unio’s Horizon 2020 Research and Innovation Staff Exchange (RISE) Scheme (Grant No. 734578), One Belt and One Road International Cooperation Project from the Key Research and Development Program of Zhejiang Province, China (Grant No. 2018C04021), and Xinmiao Talents Program of Zhejiang Province, China (Grant No. 2017R403078).</p></fn>

Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films**

Project supported by the National Natural Science Foundation of China (Grant Nos. 50972129 and 50602039), the International Science Technology Cooperation Program of China (Grant No. 2014DFR51160), the National Key Research and Development Program of China (Grant No. 2016YFE0133200), European Unio’s Horizon 2020 Research and Innovation Staff Exchange (RISE) Scheme (Grant No. 734578), One Belt and One Road International Cooperation Project from the Key Research and Development Program of Zhejiang Province, China (Grant No. 2018C04021), and Xinmiao Talents Program of Zhejiang Province, China (Grant No. 2017R403078).

Xu Hui¹, Liu Jian-Jun¹, Ye Hai-Tao^{2, †}, Coathup D J², Khomich A V^{3, 4}, Hu Xiao-Jun^{1, ‡}

(color online) (a) Schematic diagram of the electrical measurement across the film. (b) Equivalent circuit for the electrical response of a UNCD sample with contributions from diamond grains (denoted as “g”), grain boundaries (denoted as “b”), and electrode interface (denoted as “e”).