Enhancement and control of the Goos—Hänchen shift by nonlinear surface plasmon resonance in graphene

You Qi¹, Jiang Leyong², Dai Xiaoyu¹, Xiang Yuanjiang^{1, †}

(color online) Dependence of the GH shift on the incident light intensity for different electron–phonon relaxation times τ of graphene (a) and air gap thickness d (b). Here d = 6.0 μm, θ = 25.44°, and E_F = 0.90 eV in (a), and τ = 0.5 ps, θ = 25.44°, and E_F = 0.90 eV in (b), and the other parameters have the same values as in Fig. 2.