Enhancement and control of the Goos—Hänchen shift by nonlinear surface plasmon resonance in graphene

You Qi¹, Jiang Leyong², Dai Xiaoyu¹, Xiang Yuanjiang^{1, †}

(color online) Dependence of (a) the reflectance, (b) reflectance phase, and (c) GH shift on the incident light intensity for different Fermi levels of graphene. Here d = 6.0 μm, θ = 25.44°, and the other parameters have the same values as in Fig. 2.