Thermal analysis of GaN-based laser diode mini-array*

Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0402002, 2016YFB0401803, 2017YFB0405002, 2017YFB0405003, and 2017YFB0405005), the National Natural Science Foundation of China (Grant Nos. 61574160, 61704184, and 61334005), the Strategic Priority Research Program of the Chinese Academy of Science (Grant No. XDA09020401), the Chinese Academy of Science Visiting Professorship for Senior International Scientists (Grant No. 2013T2J0048), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20170430), and the CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows, China (Grant No. 2016LH0026).

Hu Jun-Jie1, 2, Zhang Shu-Ming1, †, Li De-Yao1, Zhang Feng1, Feng Mei-Xin1, Wen Peng-Yan1, Liu Jian-Ping1, Zhang Li-Qun1, Yang Hui1
       

(color online) Schematic diagram of emitting area in the GaN based LD mini-array chip.