Spin manipulation in semiconductor quantum dots qubit<xref rid="cpb_27_9_090308_fn1" ref-type="fn">*</xref><fn id="cpb_27_9_090308_fn1"><label>*</label><p>Project supported by the National Key R&D Program of China (Grant No. 2016YFA0301700), the National Natural Science Foundation of China (Grant Nos. 11674300, 61674132, 11575172, and 11625419), and the Fundamental Research Fund for the Central Universities, China.</p></fn>

Spin manipulation in semiconductor quantum dots qubit**

Project supported by the National Key R&D Program of China (Grant No. 2016YFA0301700), the National Natural Science Foundation of China (Grant Nos. 11674300, 61674132, 11575172, and 11625419), and the Fundamental Research Fund for the Central Universities, China.

Wang Ke, Li Hai-Ou, Xiao Ming, Cao Gang^†, Guo Guo-Ping^‡

(color online) Schematic diagrams of the E-RO single-shot readout progress. (a) The upper panel shows the gate voltage pulse, which consists of three steps: empty, inject & wait, and readout. The lower panel shows the response of the QPC signals. The dashed line represents the signal when spin-down is injected in. (b) Energy diagrams for spin-up and spin-down states for the different situations during the three pulse steps. The upper panel is a spin-down injected diagram while the lower one is spin-up injected. Panels (c) and (d) represent the experimental result of a single-shot readout of an electron spin for two different types of spin states: the upper panel corresponds to a spin-up electron and the lower panel is a spin-down electron. The figure comes from Ref. [7].