Spin manipulation in semiconductor quantum dots qubit<xref rid="cpb_27_9_090308_fn1" ref-type="fn">*</xref><fn id="cpb_27_9_090308_fn1"><label>*</label><p>Project supported by the National Key R&D Program of China (Grant No. 2016YFA0301700), the National Natural Science Foundation of China (Grant Nos. 11674300, 61674132, 11575172, and 11625419), and the Fundamental Research Fund for the Central Universities, China.</p></fn>

Spin manipulation in semiconductor quantum dots qubit**

Project supported by the National Key R&D Program of China (Grant No. 2016YFA0301700), the National Natural Science Foundation of China (Grant Nos. 11674300, 61674132, 11575172, and 11625419), and the Fundamental Research Fund for the Central Universities, China.

Wang Ke, Li Hai-Ou, Xiao Ming, Cao Gang^†, Guo Guo-Ping^‡

(color online) The dc transport measured current by sweeping V_R and V_L with a (a), (b) positive bias and (c), (d) negative bias. (a), (c) In the one-electron regime, no spin blockade phenomenon is observed, (b), (d) while it is obvious in the two-electron regime. The figure comes from Ref. [59].