Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers<xref rid="cpb_27_8_088504fn1" ref-type="fn">*</xref><fn id="cpb_27_8_088504fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0403100 and 2017YFB0403101), the National Natural Science Foundation of China (Grant Nos. 61404114, 61504119, and 11004170), the China Postdoctoral Science Foundation (Grant No. 2017M611923), and the Jiangsu Planned Projects for Postdoctoral Research Funds, China (Grant No. 1701067B).</p></fn>

Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers**

Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFB0403100 and 2017YFB0403101), the National Natural Science Foundation of China (Grant Nos. 61404114, 61504119, and 11004170), the China Postdoctoral Science Foundation (Grant No. 2017M611923), and the Jiangsu Planned Projects for Postdoctoral Research Funds, China (Grant No. 1701067B).

Cheng Li-Wen^{1, 4, †}, Ma Jian¹, Cao Chang-Rui¹, Xu Zuo-Zheng¹, Lan Tian², Yang Jin-Peng¹, Chen Hai-Tao¹, Yu Hong-Yan², Wu Shu-Dong¹, Yao Shun³, Zeng Xiang-Hua¹, Xu Zai-Quan^{5, ‡}

(color online) Distributions of hole concentrations near the active region of the three LEDs at 150 mA. The inset shows the magnified part of the logarithm curve of the hole concentration versus distance for each of three LEDs near the p-side.