Time-dependent crosstalk effects for image sensors with different isolation structures<xref rid="cpb_27_8_088503fn1" ref-type="fn">*</xref><fn id="cpb_27_8_088503fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. NKRDP 2016YFA0202101).</p></fn>

Time-dependent crosstalk effects for image sensors with different isolation structures**

Project supported by the National Key Research and Development Program of China (Grant No. NKRDP 2016YFA0202101).

Shen Lei, Liu Li-Qiao, Hao Hao, Du Gang, Liu Xiao-Yan^†

(color online) Electron current density profiles for 400-nm, 500-nm, and 750-nm incident light at three exposure times.