Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves
(color online) The distribution of (a) current densities and (b) temperature at t = 3.25 ns.
Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves |
(color online) The distribution of (a) current densities and (b) temperature at t = 3.25 ns. |
| |