Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves
(color online) The distribution of the electric field at (a) t = 3.05 ns, (b) t = 3.15 ns, and (c) t = 3.25 ns.
Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves |
(color online) The distribution of the electric field at (a) t = 3.05 ns, (b) t = 3.15 ns, and (c) t = 3.25 ns. |
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