Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves
(color online) The distribution of (a) electric field, (b) current densities, and (c) lattice temperature at t = 3.75 ns.
Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves |
(color online) The distribution of (a) electric field, (b) current densities, and (c) lattice temperature at t = 3.75 ns. |
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