Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves
(color online) The distribution of the current densities at (a) t = 2.25 ns and (b) t = 2.75 ns.
Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves |
(color online) The distribution of the current densities at (a) t = 2.25 ns and (b) t = 2.75 ns. |
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