Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors<xref rid="cpb_27_8_088106_fn1" ref-type="fn">*</xref><fn id="cpb_27_8_088106_fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0200503), the Program for Innovative Research Team (in Science and Technology) in University of Henan Province, China (Grant No. 18IRTSTHN016), and the National Natural Science Foundation of China (Grant Nos. 61376096, 61327813, and 61404126).</p></fn>

Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors**

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0200503), the Program for Innovative Research Team (in Science and Technology) in University of Henan Province, China (Grant No. 18IRTSTHN016), and the National Natural Science Foundation of China (Grant Nos. 61376096, 61327813, and 61404126).

Ma Liu-Hong^{1, 3}, Han Wei-Hua^{2, 3, †}, Zhao Xiao-Song^{2, 3}, Guo Yang-Yan^{2, 3}, Dou Ya-Mei^{2, 3}, Yang Fu-Hua^{3, 4, ‡}

(color online) Nanoscale JNTs under the subthreshold conduction with different channel-doping profiles. (a) Illustrations of possible dopant arrangements and expected potentials landscapes induced by a larger number of ionized donors forming multiple-coupled QDs for type-A devices. (b) A possible potential landscape induced by a few isolated, ionized donors for type-B devices.