Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0200503), the Program for Innovative Research Team (in Science and Technology) in University of Henan Province, China (Grant No. 18IRTSTHN016), and the National Natural Science Foundation of China (Grant Nos. 61376096, 61327813, and 61404126). |
(color online) (a) IDS–VGS and (b) Gm–VGS characteristics of a typical type-A device measured at 6 K. The applied VDS range from 2 mV to 6 mV in increments of 2 mV. (b) IDS–VGS and (d) Gm–VGS characteristics of a typical type-B device measured at 6 K. |
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