Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors<xref rid="cpb_27_8_088106_fn1" ref-type="fn">*</xref><fn id="cpb_27_8_088106_fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0200503), the Program for Innovative Research Team (in Science and Technology) in University of Henan Province, China (Grant No. 18IRTSTHN016), and the National Natural Science Foundation of China (Grant Nos. 61376096, 61327813, and 61404126).</p></fn>

Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors**

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0200503), the Program for Innovative Research Team (in Science and Technology) in University of Henan Province, China (Grant No. 18IRTSTHN016), and the National Natural Science Foundation of China (Grant Nos. 61376096, 61327813, and 61404126).

Ma Liu-Hong^{1, 3}, Han Wei-Hua^{2, 3, †}, Zhao Xiao-Song^{2, 3}, Guo Yang-Yan^{2, 3}, Dou Ya-Mei^{2, 3}, Yang Fu-Hua^{3, 4, ‡}

(color online) (a) I_DS–V_GS and (b) G_m–V_GS characteristics of a typical type-A device measured at 6 K. The applied V_DS range from 2 mV to 6 mV in increments of 2 mV. (b) I_DS–V_GS and (d) G_m–V_GS characteristics of a typical type-B device measured at 6 K.