Growth of high-quality perovskite (110)-SrIrO<sub>3</sub> thin films using reactive molecular beam epitaxy<xref rid="cpb_27_8_088103fn1" ref-type="fn">*</xref><fn id="cpb_27_8_088103fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of the MOST of China (Grant No. 2016YFA0300204), the National Key Basic Research Program of China (Grant No. 2015CB654901), the National Natural Science Foundation of China (Grant Nos. 11574337, 11227902, 11474147, and 11704394), Shanghai Sailing Program (Grant No. 17YF1422900), and the Award for Outstanding Member in Youth Innovation Promotion Association of the Chinese Academy of Sciences.</p></fn>

Growth of high-quality perovskite (110)-SrIrO₃ thin films using reactive molecular beam epitaxy**

Project supported by the National Key Research and Development Program of the MOST of China (Grant No. 2016YFA0300204), the National Key Basic Research Program of China (Grant No. 2015CB654901), the National Natural Science Foundation of China (Grant Nos. 11574337, 11227902, 11474147, and 11704394), Shanghai Sailing Program (Grant No. 17YF1422900), and the Award for Outstanding Member in Youth Innovation Promotion Association of the Chinese Academy of Sciences.

Zhang Kai-Li^{1, 2}, Fan Cong-Cong^{1, 2}, Liu Wan-Ling³, Wu Yu-Feng^{1, 2}, Lu Xiang-Le^{1, 2}, Liu Zheng-Tai^{1, 4}, Liu Ji-Shan^{1, 4}, Liu Zhong-Hao^{1, 4}, Shen Da-Wei^{1, 4, ‡}

(color online) RHEED pattern before deposition (a), after depositing buffer layers (b), and after depositing 20 u.c. SrIrO₃ films (c). (d) Diffraction intensity oscillation of buffer layers. (e) Comparison of integration curves over different periods. (f) Ideal surface of (110)-SrIrO₃. (g) (1 × 2) reconstruction on the surface of the as-grown SrIrO₃ films.