High uniformity and forming-free ZnO-based transparent RRAM with HfOx inserting layer<xref rid="cpb_27_8_087701fn1" ref-type="fn">*</xref><fn id="cpb_27_8_087701fn1"><label>*</label>Project supported by the National Key Research and Development Program of China (Grant No. 2017yfb0405600), the National Natural Science Foundation of China (Grant Nos. 61404091, 61274113, 61505144, 51502203, and 51502204), and the Natural Science Foundation of Tianjin City (Grant Nos. 17JCYBJC16100 and 17JCZDJC31700).</fn>

High uniformity and forming-free ZnO-based transparent RRAM with HfO_x inserting layer**

Project supported by the National Key Research and Development Program of China (Grant No. 2017yfb0405600), the National Natural Science Foundation of China (Grant Nos. 61404091, 61274113, 61505144, 51502203, and 51502204), and the Natural Science Foundation of Tianjin City (Grant Nos. 17JCYBJC16100 and 17JCZDJC31700).

Wu Shi-Jian, Wang Fang^†, Zhang Zhi-Chao, Li Yi, Han Ye-Mei, Yang Zheng-Chun, Zhao Jin-Shi, Zhang Kai-Liang^‡

(color online) ITO/HfO_x/ZnO/ITO structure devices. (a) I–V characteristics; (b) endurance of different HfO_x thicknesses of 5 nm, (c) 10 nm, and (d) 15 nm, and the double arrows and numbers in panels (b), (c), and (d) indicate the resistance ratio between HRS and LRS.