Black phosphorus-based field effect transistor devices for Ag ions detection<xref rid="cpb_27_8_087308fn1" ref-type="fn">*</xref><fn id="cpb_27_8_087308fn1"><label>*</label><p>Project support by the National Natural Science Foundation of China (Grant Nos. 61605131 and 61435010) and the Shenzhen Science and Technology Research Fund, China (Grant No. JCYJ20150324141711624).</p></fn>

Black phosphorus-based field effect transistor devices for Ag ions detection**

Project support by the National Natural Science Foundation of China (Grant Nos. 61605131 and 61435010) and the Shenzhen Science and Technology Research Fund, China (Grant No. JCYJ20150324141711624).

Wang Hui-De¹, Sang David K¹, Guo Zhi-Nan^{1, †}, Cao Rui^{1, 2}, Zhao Jin-Lai², Ullah Shah Muhammad Najeeb¹, Fan Tao-Jian¹, Fan Dian-Yuan¹, Zhang Han^{1, ‡}

(color online) (a) Schematic of Ag⁺ adsorption to the surface of BP-FET. (b) Band structure of BP before and after Ag⁺ absorption. It shows that Fermi level of BP sheets moves close to valence band, increasing hole concentration and conductance of BP sheet because of Ag⁺ absorption.