Black phosphorus-based field effect transistor devices for Ag ions detection<xref rid="cpb_27_8_087308fn1" ref-type="fn">*</xref><fn id="cpb_27_8_087308fn1"><label>*</label><p>Project support by the National Natural Science Foundation of China (Grant Nos. 61605131 and 61435010) and the Shenzhen Science and Technology Research Fund, China (Grant No. JCYJ20150324141711624).</p></fn>

Black phosphorus-based field effect transistor devices for Ag ions detection**

Project support by the National Natural Science Foundation of China (Grant Nos. 61605131 and 61435010) and the Shenzhen Science and Technology Research Fund, China (Grant No. JCYJ20150324141711624).

Wang Hui-De¹, Sang David K¹, Guo Zhi-Nan^{1, †}, Cao Rui^{1, 2}, Zhao Jin-Lai², Ullah Shah Muhammad Najeeb¹, Fan Tao-Jian¹, Fan Dian-Yuan¹, Zhang Han^{1, ‡}

(color online) (a) Output and (b) transfer curves of BP-FET sensor before (black) and after (red) Ag⁺ adsorption (10⁻¹⁰ mol/L, 60 s), with channel length and width of the device being both 3 μm.