Black phosphorus-based field effect transistor devices for Ag ions detection<xref rid="cpb_27_8_087308fn1" ref-type="fn">*</xref><fn id="cpb_27_8_087308fn1"><label>*</label><p>Project support by the National Natural Science Foundation of China (Grant Nos. 61605131 and 61435010) and the Shenzhen Science and Technology Research Fund, China (Grant No. JCYJ20150324141711624).</p></fn>

Black phosphorus-based field effect transistor devices for Ag ions detection**

Project support by the National Natural Science Foundation of China (Grant Nos. 61605131 and 61435010) and the Shenzhen Science and Technology Research Fund, China (Grant No. JCYJ20150324141711624).

Wang Hui-De¹, Sang David K¹, Guo Zhi-Nan^{1, †}, Cao Rui^{1, 2}, Zhao Jin-Lai², Ullah Shah Muhammad Najeeb¹, Fan Tao-Jian¹, Fan Dian-Yuan¹, Zhang Han^{1, ‡}

(color online) (a)I_ds versus V_ds curves obtained from the BP-FET after Ag⁺ adsorption for 0 s, 20 s, 40 s, 60 s, 80 s. V_gs = 0 V. (b) I_ds versus adsorption–time curves obtained from panel (a), at V_d = 0.2 V, 0.5 V, and 1.0 V, respectively. (c) I_ds versus V_ds curves obtained from the BP-FET after Ag⁺ adsorption for 60 s with different Ag⁺ concentrations ranging from 10⁻¹⁰ mol/L to 10⁻⁶ mol/L at room temperature, V_gs = 0 V. (d) Conductance versus ion concentrations curves obtained from panel (c), at V_ds = 1.0 V, V_gs = 0 V (inset: logarithmic scale).